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atomic ratio中文是什么意思

  • 原子比

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  • The atomic ratio of zn / se was close to 1 : 1 , which showed that the znse epilayers had good stoichiometry
    Znse薄膜中zn se原子比都接近1 : 1 ,制備的znse薄膜具有較好的化學(xué)計(jì)量比。
  • Standard test method for the determination of uranium by ignition and the oxygen to uranium atomic ratio of nuclear grade uranium dioxide powders and pellets
    用點(diǎn)火和核級(jí)二氧化鈾粉末和顆粒的氧鈾原子比測(cè)定鈾的標(biāo)準(zhǔn)試驗(yàn)方法
  • The xrf analysis of plct thin films shows that the atomic ratio of plct thin films is closed the ideal chemical mole ratio of plct thin films
    利用xrf分析了plct薄膜的pb 、 la 、 ca 、 ti原子百分比,可以看出其比例接近于設(shè)計(jì)的化學(xué)式摩爾比。
  • Abstract : based on the principle of non - weighting determination of c 、 h 、 n atomic ratio , a micro - injection sample introducing method was developed for determination of h / c ratio for volatile reagent
    文摘:根據(jù)不稱重法測(cè)定化合物碳、氫、氮原子比的理論,建立了微量注射法測(cè)定強(qiáng)揮發(fā)性液體樣品的氫/碳原子比的方法。
  • The surface elemental analysis shows that al / o atomic ratio change from about 2 / 3 of not wetted part to about 1 / 1 of wetted part . the damage of coating surface seems to be related to the interaction of outside layer with liquid pb - 17li and thermal stress during heating sample
    未浸潤表面的ai / o原子比約為2 / 3 ,浸潤表面約為1 / 1 ,表明液態(tài)鉛鋰合金對(duì)滲鋁層表面的al2o3薄層造成了損傷。
  • When sulphurisation time is 30 minutes and sulphurisation temperature change from 180 to 240 , the atomic ratio s / sn of the films increases from 0 . 72 to 1 . 08 and energy gap of the films increases from 1 . 44ev to 1 . 48ev with the increasing of the sulphurisation temperature
    當(dāng)硫化時(shí)間為30分鐘硫化溫度在240 ~ 310之間變化時(shí),薄膜的s / sn值隨著硫化溫度的升高從1 . 08上升到1 . 96 ,能帶間隙隨著硫化溫度的升高從1 . 01ev上升到1 . 72ev 。
  • The results are as follows : as the sputtering pressure increases , the atomic ratio of o to ti increase in the films , which is attributed to the fact that the absolute oxygen content increases , as the pressure increases despite the ratio of 62 to ar remains unchangless
    結(jié)果發(fā)現(xiàn):在氧氣、氬氣分壓比不變的條件下,薄膜表面o和ti原子比增大,這可能是由于濺射氣壓增大,而氧氣與氬氣比未變,真空室中氧氣的絕對(duì)含量增加,參加反應(yīng)的氧原子數(shù)增加的緣故造成的。
  • When the atomic ratio of nb is one , the structure is homogeneous and almost composed of the single sm2fe17 phase . it ' s nearly the same structure as that after annealing . so it can reduce the production cost and increase the stability of magnetic properties
    當(dāng)nb的原子比為1時(shí)的鑄態(tài)組織基本為均勻的接近單相的sm _ 2fe _ ( 17 )組織,已接近于退火后的組織,從而可以避免冗長的均勻化退火化過程而直接用于制造永磁體,極大的降低了生產(chǎn)成本,并能有效的提高磁性能的穩(wěn)定性。
  • A detailed analysis of the electrical properties of ato thin films was carried out in order to investigate the sb / sn atomic ratio and substrate temperature ' s influence on the ato thin film . a convictive explanation brought forward to illustrate the changing of the electrical ; properties of the ato thin film in different conditions
    在溫度較低時(shí)( < 500 ) ,薄膜的方塊電阻隨成膜溫度的升高而降低;當(dāng)基板溫度繼續(xù)升高,薄膜的方塊電阻隨基板溫度的升高而增大,這主要是因?yàn)椴AЩ逯衚 ~ + 、 na ~ +離子向薄膜中的擴(kuò)散。
  • Surface states and the topmost surface atoms of the batio3 thin films have been analyzed by x - ray photoelectron spectroscopy ( xps ) and angle - resolved x - ray photoelectron spectroscopy ( arxps ) . the results show that the as - grown batio3 thin films have an enriched - bao nonstoichiometric surface layer which can be removed by ar + ion sputtering , and the atomic ratio of ba to ti decreases with increasing the depth of ar + ion sputtering
    用x射線光電子能譜技術(shù)( xps )和角分辨x射線光電子能譜技術(shù)( arxps )研究了薄膜的表面化學(xué)態(tài)以及最頂層原子種類和分布狀況,結(jié)果顯示在熱處理過程中薄膜表面形成一層富含bao的非計(jì)量鈦氧化物層,并且鋇-鈦原子濃度比隨著探測(cè)深度的增大而逐漸減小。
  • 百科解釋
The atomic ratio is a measure of the ratio of atoms of one kind (i) to another kind (j). A closely related concept is the atomic percent (or at.
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